| PART |
Description |
Maker |
| GP2S40J0000F |
Detecting Distance : 3mm Phototransistor Output, Compact Refl ective Photointerrupter
|
SHARP[Sharp Electrionic Components]
|
| R414730000 |
ATTENUATOR, N 2W 30DB 12.4GHZATTENUATOR, N 2W 30DB 12.4GHZ; Impedance:50R; Attenuation:30dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| GP2S27TJ000F GP2S27BJ000F GP2S27T6J00F |
SMT, Detecting Distance : 0.7mm Phototransistor Output, Compact Refl ective Photointerrupter 表面贴装，检测距离：0.7毫米光电晶体管输出，紧凑Refl ective光电断路
|
Sharp Corporation
Sharp, Corp.
Sharp Electronics, Corp.
|
| RF2938 |
2.4GHZ SPREAD-SPECTRUM TRANSCEIVER
2.4GHZ SPREAD-SPECTRUM TRANSCEIVER TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQFP48
|
RF Micro Devices, Inc.
|
| TIM6472-25UL TIM5964-12UL09 |
HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz
HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V5964 C445964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EL5166IS EL5166IS-T13 EL5166IS-T7 EL5166ISZ-T13 EL |
1.4GHz Current Feedback Amplifiers with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
1.4GHz Current Feedback Amplifiers with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO6
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| AD8341ACPZ-REEL7 AD8341ACPZ-WP |
RF Vector Modulator 1.5GHz - 2.4GHz
|
Analog Devices
|
| ML2731 ML2712-1 |
2.4GHz FHSS Radio Chipset
|
MICRO-LINEAR[Micro Linear Corporation]
|
